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The figure shows a Raman image of an M-shaped shallow trench isolation (STI), a common processing technique in microelectronics. The colour scheme maps the position of the 520 cm-1 silicon peak, with compressive and tensile stress; coloured red black respectively. For more information on this and other semiconductor applications, please download one of the application notes. Please note that document downloads require registration. Documents for download
Selected publicationsCorrelation between structural properties and performances of microcrystalline silicon solar cells (2005), P Delli Veneri et al, Thin solid films, 487, 174-178 Measurement of the state of stress in silicon with micro-Raman spectroscopy (2004), S J Harris et al, Journal of Applied Physics, Vol. 96, 12, 7196-7201 Crosshatching on a SiGe film grown on a Si(001) substrate studied by Raman mapping and atomic force microscopy (2002), H Chen et al, The American Physical Society, 65, 233303-1 to 4 NewsletterAll the latest innovations in Raman spectroscopy - newsletter sign up here Download past and present newsletters from our Newsletter archive StreamLine™ Plus fast Raman imaging |
A key issue in the rapidly evolving world of microelectronics is quality control during miniaturisation processes. One of the principal hurdles to overcome is strain-induced failure arising from lattice mismatch among different materials, different thermal expansion coefficients, sharp patterning, and device re- scaling. The ability of Raman microscopy to monitor stress, and other parameters such as surface/device temperature, make it an effective tool throughout the semiconductor device manufacturing process, starting with R&D through to the production line.
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